Typical Physical Properties:

Crystal Structure

trigonal system, group 33. a= 8.1783 ? c = 5.1014 ?

Growth Method

Czochralski

Moh ' s Hardness

6.6

Density

5.754 g /cm 3

Melt Point

1470 ℃ ( phase transition point: N/A)

Thermal expansion (x10-6/ ℃ )

α 11 : 5.10 α 33 : 3.61

Acoustic velocity, SAW

2400 ( m/sec )

Frequency constant, BAW

1380 ( kHz/mm )

Piezoelectric coupling

K square(%) BAW: 2.21 SAW: 0.3

Inclusion

N0

Standard Wafer Specifications:

Orientation

orientation specified by customer. ± 0.5 °

Polished surface

EPI polished on one side or two sides to Ra < 10A
Working Area: Wafer diameter minus 2 mm
BOW: < 10 um for 2 ″ wafer
No chips out on working area. In the edge, chip width < 0.5 mm
Pit and scratches: < 3 per wafer or < 20 per 100 wafers

Standard Thickness

0.5 mm ± 0.05mm TTV < 5 um

Standard Diameter

35 ( mm ) ± 0.2 mm

We can provide specific directional and dimensions and according to demand.